Book/Dissertation / PhD Thesis

FZJ-2023-01723

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png HAXPES study of interface and bulk chemistry of ferroelectric HfO2 capacitors

Szyjka, T. (Corresponding author)FZJ*

2023
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag Jülich
ISBN: 978-3-95806-692-2

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Please use a persistent id in citations: doi:10.34734/FZJ-2023-01723

Abstract: HfO2 is the first known ferroelectric material formed from only two elements. The discovery of the ferroelectric properties took place in 2011 in Si-doped HfO2 thin films. This stimulated widespread investigations on the fundamentals and origin of the ferroelectric properties in HfO2 based materials and the exploration of potential applications in the semiconductor industry. The orthorhombic crystal structure in HfO2 has been identified as the ferroelectric phase. This work takes place in the framework of the EU project 3ǫFERRO, which aims to design HfO2 based nonvolatile memory. Here, HfO2 has the role of a dielectric enclosed by two electrodes in a capacitor structure. To achieve the project goals, application-oriented fundamental research is needed to produce optimization options for the ferroelectric materials and interfaces to the electrodes.

Note: Dissertation, Univ. Konstanz, 2022

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Contributing Institute(s):

1. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. 5211 - Topological Matter (POF4-521) (POF4-521)

Appears in the scientific report 2023

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